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  Datasheet File OCR Text:
 N-Channel JFET Low Noise Amplifier
CORPORATION
2N4338 - 2N4341
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +175oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
* Exceptionally High Figure of Merit * Radiation Immunity * Extremely Low Noise and Capacitance * High Input Impedance * Low-level Choppers * Data Switches * Multiplexers and Low Noise Amplifiers
PIN CONFIGURATION
APPLICATIONS
ORDERING INFORMATION Part
TO-18
Package Hermetic TO-18 Sorted Chips in Carriers
Temperature Range -55oC to +175oC -55oC to +175oC
2N4338-41 X2N4338-41
G,C
5010
D
S
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL IGSS BVGSS VGS(off) ID(off) IDSS gfs gos rDS(on) Ciss Crss PARAMETER Gate Reverse Current 2N4338 2N4339 2N4340 2N4341 UNITS MIN MAX MIN MAX MIN MAX MIN MAX -0.1 -0.1 -0.1 -0.1 nA TA = 150 oC -50 -0.3 -1 0.05 (-5) 0.2 0.6 0.5 -0.1 -50 -0.6 -1.8 0.05 (-5) 1.5 1.2 -0.1 -50 -1 -3 0.05 (-5) 3.6 3 -0.1 -50 -2 -6 0.07 (-10) 9 -0.1 A V nA (V) mA S ohm pF TEST CONDITIONS VGS = -30V, VDS = 0 IG = -1A, VDS = 0 VDS = 15V, ID = 0.1A VDS = 15V, VGS = ( ) VDS = 15V, VGS = 0 VDS = 15V, VGS = 0 VDS = 0, IDS = 0 VDS = 15V, VGS = 0 (Note 1) f = 1MHz VDS = 15V, VGS = 0 Rgen = 1meg, BW = 200Hz
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Drain Cutoff Current Saturation Drain Current (Note 2) Common-Source Forward Transconductance (Note 2) Common-Source Output Conductance Drain-Source ON Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Noise Figure (Note 1)
600 1800 800 2400 1300 3000 2000 4000 5 2500 7 3 15 1700 7 3 30 1500 7 3 60 800 7 3
f = 1kHz
NF
1
1
1
1
dB
f = 1kHz
NOTES: 1. For design reference only, not 100% tested. 2. Pulse test duration 2ms (non-JEDEC Condition).


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